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IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
V DS = 20 V; I D = 0.5 I D25 , pulse test
20
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
2630
310
pF
pF
1
2
3
C rss
t d(on)
27
22
pF
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 10 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
(TO-247 & PLUS220)
25
72
21
50
16
18
0.21
ns
ns
ns
nC
nC
nC
0.35 ° C/W
° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
V GS = 0 V
22
A
S 6.15 BSC
242 BSC
I SM
V SD
t rr
Q RM
I RM
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 22A, -di/dt = 100 A/ μ s
V R = 100V, V GS = 0 V
0.7
7
55
1.5
200
A
V
ns
μ C
A
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV...S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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